Optimering van die plasmaondersteunde chemiese dampdeponering van kwartsagtige lagies by lae temperature
Suid-Afrikaanse Tydskrif vir Natuurwetenskap en Tegnologie/South African Journal of Science and Technology
| Field | Value | |
| Title | Optimering van die plasmaondersteunde chemiese dampdeponering van kwartsagtige lagies by lae temperature Optimization of the plasma-assisted chemical vapour deposition of silica-like thin films at low temperatures | |
| Creator | Crouse, P. L. Bester, J. A. | |
| Description | Plasmaondersteunde chemiese dampdeponering (POCDD) van SiOᵪCᵧ-lagies in 'n radiofrekwensie-plasmareaktor by kamertemperatuur word bespreek. Die bekende statistiese tegniek van responsieoppervlakanalise is vir die eksperimentele ontwerp gebruik. 'n Eenvoudige dog nuttige tegniek word geїllustreer vir die optimering van enige uitsetveranderlike, onderworpe aan die dwangvoorwaardes opgelê deur sowel die eksperimentele opstelling as die waardes wat vir ander uitsetveranderlikes vereis word. Results pertaining to the plasma-assisted chemical vapour deposition (PACVD) of SiOᵪCᵧ thin films at room temperature using a self-biasing radio-frequency plasma reactor are presented. Response surface analysis was used for experimental design. A simple technique is illustrated for the optimizing of any physical property, subject to the constraints imposed by the apparatus and by the required values of other physical properties. | |
| Publisher | AOSIS | |
| Date | 1996-07-10 | |
| Identifier | 10.4102/satnt.v15i1.628 | |
| Source | Suid-Afrikaanse Tydskrif vir Natuurwetenskap en Tegnologie; Vol 15, No 1 (1996); 23-30 Suid-Afrikaanse Tydskrif vir Natuurwetenskap en Tegnologie; Vol 15, No 1 (1996); 23-30 2222-4173 0254-3486 | |
| Language | eng | |
| Relation |
The following web links (URLs) may trigger a file download or direct you to an alternative webpage to gain access to a publication file format of the published article:
https://journals.satnt.aosis.co.za/index.php/satnt/article/view/628/1135
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