The structural characterisation of HWCVD-deposited nanocrystalline silicon films

South African Journal of Science

 
 
Field Value
 
Title The structural characterisation of HWCVD-deposited nanocrystalline silicon films
 
Creator Swain, Bibhu P.
 
Subject — —
Description Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30–50% and the nc-Si crystallite size was in the range 20–35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.
 
Publisher AOSIS
 
Contributor
Date 2010-01-19
 
Type info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion — —
Format application/pdf
Identifier 10.4102/sajs.v105i1/2.41
 
Source South African Journal of Science; Vol 105, No 1/2 (2009); 77 1996-7489 0038-2353
 
Language eng
 
Relation
The following web links (URLs) may trigger a file download or direct you to an alternative webpage to gain access to a publication file format of the published article:

https://journals.sajs.aosis.co.za/index.php/sajs/article/view/41/30
 
Coverage — — —
Rights Copyright (c) 2010 Bibhu P. Swain https://creativecommons.org/licenses/by/4.0
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