Second harmonic generation as a technique to probe buried interfaces
South African Journal of Science
| Field | Value | |
| Title | Second harmonic generation as a technique to probe buried interfaces | |
| Creator | Neethling, P.H. T. Scheidt, T. Rohwer, E.G. von Bergmann, H.M. Stafast, H. | |
| Description | Since the advances of femtosecond laser technology during the last decade, optical second harmonic generation (SHG) has proven itself a powerful tool to investigate the electronic and structural properties of semiconductor materials. Its advantage lies in the fact that it is a contact-less, non-intrusive method that can be used in situ. It is sensitive to systems with broken symmetry, in particular interfaces and surfaces. The Si/SiO2 system is technologically important since it forms a component of most modern electronic equipment. Furthermore, it has been shown that it is possible to induce an electric field across this interface by means of laser irradiation as a result of defect formation and defect population. This electric field can be measured since it determines the SHG signal. The anisotropy of the SHG signal from the Si/SiO2 interface was measured and showed four-fold symmetry, illustrating that the SHG technique was able to characterise the electrical properties of the interface below the 5 nm thick oxide layer. | |
| Publisher | AOSIS | |
| Date | 2010-01-19 | |
| Identifier | 10.4102/sajs.v105i7/8.74 | |
| Source | South African Journal of Science; Vol 105, No 7/8 (2009); 282 1996-7489 0038-2353 | |
| Language | eng | |
| Relation |
The following web links (URLs) may trigger a file download or direct you to an alternative webpage to gain access to a publication file format of the published article:
https://journals.sajs.aosis.co.za/index.php/sajs/article/view/74/55
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