Solid-state compound phase formation of TiSi2 thin films under stress
South African Journal of Science
| Field | Value | |
| Title | Solid-state compound phase formation of TiSi2 thin films under stress | |
| Creator | Theron, C. Mokoena, N. Ndwandwe, O. M. | |
| Description | Different stress situations were created on an Si(100) wafer by depositing either Si3N4 or SiO2 thin films on the back side. Si3N4 has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si3N4-deposited samples and SiO2-deposited samples. | |
| Publisher | AOSIS | |
| Date | 2010-02-02 | |
| Identifier | 10.4102/sajs.v105i11/12.144 | |
| Source | South African Journal of Science; Vol 105, No 11/12 (2009); 440-444 1996-7489 0038-2353 | |
| Language | eng | |
| Relation |
The following web links (URLs) may trigger a file download or direct you to an alternative webpage to gain access to a publication file format of the published article:
https://journals.sajs.aosis.co.za/index.php/sajs/article/view/144/118
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